| PART |
Description |
Maker |
| TC1235EUNTR TC1236EUNTR TC1237EUNTR |
Inverting dual (Vin, Vin) charge pump voltage converters with shutdown, 12KHz
Inverting dual (Vin, Vin) charge pump voltage converters with shutdown, 35KHz
Inverting dual (Vin, Vin) charge pump voltage converters with shutdown, 125KHz
Inverting Dual (-VIN, -2VIN) Charge Pump Voltage Converters with Shutdown
|
Microchip
|
| MIC69301 MIC69301-1.2WR MIC69301-1.2WU MIC69301-1. |
Single Supply VIN, Low VIN, Low VOUT, 3A LDO
|
Micrel Semiconductor
|
| X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8
PS LINEAR DUAL 5V@6A 9-15@2.5A
ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
http://
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| LTM8020 LTM8021 LTM8022 LTM8023 LTM4608AEVPBF LTM4 |
Low VIN, 8A DC/DC Module Regulator with Tracking, Margining, and Frequency Synchronization
8A, Low VIN DC/DC µModule with Tracking, Margining, Multiphase and Frequency Synchronization; Package: LGA; No of Pins: 68; Temperature Range: -40°C to 125°C 10 A SWITCHING REGULATOR, 1750 kHz SWITCHING FREQ-MAX, BGA68
|
http://
Linear Technology, Corp.
|
| IS62LV1024 IS62LV1024LL IS62LV1024L IS62LV1024L-45 |
128K x 8 LOW POWER AND LOW Vcc 128K的8低功耗和低成本吓
128K*8 LOW POWER AND LOW Vcc CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
Samsung Semiconductor Co., Ltd.
Glenair, Inc.
N.A.
ICSI[Integrated Circuit Solution Inc]
|
| PTH12050L |
12 Vin
|
http://
|
| MIC5325-1.2YMT MIC5325-1.5YMT MIC5325-1.8YMT |
Low VIN/VOUT 400mA ULDO with Ultra-Low IQ
Low VIN/VOUT 400mA ULDO⑩ with Ultra-Low IQ
|
Micrel Semiconductor
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| LP28019-00 |
Vin Over Voltage Protection:6.5V
|
Lowpower Semiconductor ...
|
| SMT40C2-00SADJJ SIL40C2 SIL40C2-00SADJ-HJ SIL40C2- |
4.5-13.8 Vin Single C-Class Non-Isolated
|
Emerson Network Power
|
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